| 发明名称 |
TFET with Nanowire Source |
| 摘要 |
A tunnel field effect transistor (TFET) includes a source region, the source region comprising a first portion of a nanowire; a channel region, the channel region comprising a second portion of the nanowire; a drain region, the drain region comprising a portion of a silicon pad, the silicon pad being located adjacent to the channel region; and a gate configured such that the gate surrounds the channel region and at least a portion of the source region. |
| 申请公布号 |
US2014239258(A1) |
申请公布日期 |
2014.08.28 |
| 申请号 |
US201213571657 |
申请日期 |
2012.08.10 |
| 申请人 |
Bangsaruntip Sarunya;Lauer Isaac;Majumdar Amlan;Sleight Jeffrey |
发明人 |
Bangsaruntip Sarunya;Lauer Isaac;Majumdar Amlan;Sleight Jeffrey |
| 分类号 |
H01L29/08;H01L29/78;H01L29/06 |
主分类号 |
H01L29/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A tunnel field effect transistor (TFET), comprising:
a source region, the source region comprising a first portion of a nanowire; a channel region, the channel region comprising a second portion of the nanowire; a drain region, the drain region comprising a portion of a silicon pad, the silicon pad being located adjacent to the channel region; and a gate configured such that the gate surrounds the channel region and at least a portion of the source region. |
| 地址 |
Mount Kisco NY US |
