METHOD FOR MANUFACTURING SILICON MONOCRYSTAL ROD

摘要

The present invention is a method for manufacturing a silicon monocrystal rod in which an N-region silicon monocrystal rod is pulled up using the CZ method, wherein a heat treatment for exposing an oxygen precipitate is performed on a sample wafer from an N-region silicon monocrystal rod, and EOSF inspection in which selective etching is performed to measure EOSF concentration, and shallow-pit inspection in which the pattern of shallow pits is inspected, are performed, whereby, in accordance with the results obtained by assessing the defective regions of the sample wafer, the pulling conditions are adjusted so that when the next N-region silicon monocrystal rod is pulled up and the defective region is assessed to be an N-region, assessment is performed as to whether the defect is in the Nv region or the Ni region. There is provided thereby a manufacturing method for allowing adjustment of the pulling conditions for an N-region silicon monocrystal using the CZ method based on the results of inspection of a sample wafer even if no defect is found.