| 发明名称 |
SILICON NITRIDE GATE ENCAPSULATION BY IMPLANTATION |
| 摘要 |
A method of forming a FinFET structure which includes forming fins on a semiconductor substrate; forming a gate wrapping around at least one of the fins, the gate having a first surface and an opposing second surface facing the fins; depositing a hard mask on a top of the gate; angle implanting nitrogen into the first and second surfaces of the gate so as to form a nitrogen-containing layer in the gate that is below and in direct contact with the hard mask on top of the gate; forming spacers on the gate and in contact with the nitrogen-containing layer; and epitaxially depositing silicon on the at least one fin so as to form a raised source/drain. Also disclosed is a FinFET structure. |
| 申请公布号 |
US2014239420(A1) |
申请公布日期 |
2014.08.28 |
| 申请号 |
US201313776324 |
申请日期 |
2013.02.25 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Basker Veeraraghavan S.;Mehta Sanjay;Yamashita Tenko;Yeh Chun-Chen |
| 分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a FinFET structure comprising:
forming fins on a semiconductor substrate; forming a gate wrapping around at least one of the fins, the gate having a first surface and an opposing second surface facing the fins; depositing a hard mask on a top of the gate; angle implanting nitrogen into the first and second surfaces of the gate so as to form a nitrogen-containing layer in the gate that is below and in direct contact with the hard mask on top of the gate; annealing the gate structure at 600° C. to form a silicon nitride layer; forming spacers on the gate and in contact with the nitrogen-containing layer; and epitaxially depositing silicon on the at least one fin so as to form a raised source/drain. |
| 地址 |
Armonk NY US |
