发明名称 |
NONPLANAR DEVICE WITH THINNED LOWER BODY PORTION AND METHOD OF FABRICATION |
摘要 |
A nonplanar semiconductor device having a semiconductor body formed on an insulating layer of a substrate. The semiconductor body has a top surface opposite a bottom surface formed on the insulating layer and a pair of laterally opposite sidewalls wherein the distance between the laterally opposite sidewalls at the top surface is greater than at the bottom surface. A gate dielectric layer is formed on the top surface of the semiconductor body and on the sidewalls of the semiconductor body. A gate electrode is formed on the gate dielectric layer on the top surface and sidewalls of the semiconductor body. A pair of source/drain regions are formed in the semiconductor body on opposite sides of the gate electrode. |
申请公布号 |
US2014239358(A1) |
申请公布日期 |
2014.08.28 |
申请号 |
US201414273373 |
申请日期 |
2014.05.08 |
申请人 |
Shah Uday;Doyle Brian S.;Brask Justin K.;Chau Robert S.;Letson Thomas A. |
发明人 |
Shah Uday;Doyle Brian S.;Brask Justin K.;Chau Robert S.;Letson Thomas A. |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A nonplanar tri-gate transistor comprising:
a semiconductor body having:
a top surface opposite a bottom surface; anda pair of laterally opposite sidewalls extending between the top surface and the bottom surface, wherein the laterally opposite sidewalls include a tapered portion that extends from the top surface to the bottom surface of the semiconductor body such that a distance between the laterally opposite sidewalls at the top surface is greater than a distance between the laterally opposite sidewalls at the bottom surface; a gate dielectric layer formed on and in direct contact with the top surface and the sidewalls of the semiconductor body from the top surface to the bottom surface; a gate electrode formed on the gate dielectric layer on the top surface and sidewalls of the semiconductor body; and a pair of source/drain region formed in the semiconductor body on opposite sides of the gate electrode. |
地址 |
Portland OR US |