Drain Pad Having a Reduced Termination Electric Field

摘要

In an exemplary implementation, a semiconductor device includes a drain pad on a semiconductor substrate, the drain pad being coupled to a plurality of drain fingers. The semiconductor device further includes a source pad on the semiconductor substrate, the source pad being coupled to a plurality of source fingers. The plurality of source fingers is interdigitated with the plurality of drain fingers. Furthermore, an outer corner of the drain pad has a gradual transition between adjoining sides of the drain pad. The gradual transition between the adjoining sides of the drain pad reduces a termination electric field at the outer corner of the drain pad. Furthermore, the gradual transition between the adjoining sides of the drain pad increases the breakdown voltage of the semiconductor device.

主权项

1. A semiconductor device comprising:
a drain pad on a semiconductor substrate, said drain pad coupled to a plurality of drain fingers; a source pad on said semiconductor substrate, said source pad coupled to a plurality of source fingers; said plurality of source fingers interdigitated with said plurality of drain fingers; an outer corner of said drain pad having a gradual transition between adjoining sides of said drain pad.