| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor switch in which high-frequency characteristics are improved while suppressing a voltage applied between terminals of an FET.SOLUTION: A semiconductor switch includes: a voltage generating circuit generating a first potential having a higher potential than a power-supply voltage supplied to a power-supply input section and a negative second potential; a signal input section receiving an input signal; a driving circuit having a first level shift circuit converting a high level of the input signal into the first potential, and a second level shift circuit converting a low level of the input signal into the second potential; and a switch section switching the connection between terminals by an output of the driving circuit. |
