THREE DIMENSIONAL NON-VOLATILE STORAGE WITH ASYMMETRICAL VERTICAL SELECT DEVICES

摘要

A three-dimensional array adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. Bit lines to which the memory elements of all planes are connected are oriented vertically from the substrate and through the plurality of planes.

主权项

1. A method of fabricating non-volatile storage, comprising:
adding one or more devices and signal lines on top of a substrate; adding a select layer above the one or more devices and signal lines, the adding the select layer includes adding select lines and adding asymmetrical vertically oriented select devices; and adding a monolithic three dimensional array above the select layer, the monolithic three dimensional array includes word lines and vertically oriented bit lines connected to memory elements; the vertically oriented select devices are connected to the vertically oriented bit lines, the select lines and global bit lines.