发明名称 Metal Lattice Production Method, Metal Lattice, X-Ray Imaging Device, and Intermediate Product for Metal Lattice
摘要 Method for manufacturing a metal grating structure, wherein, after a concave part having an insulating layer on an inner surface thereof is formed in a silicon substrate, a portion of the insulating layer formed on a bottom part of the concave part is removed, and the silicon substrate at the bottom part of the concave part is etched to increase the surface area of the bottom part of the concave part as compared with a state before the etching, followed by filling the concave part with metal by an electroforming method.
申请公布号 US2014241493(A1) 申请公布日期 2014.08.28
申请号 US201214235369 申请日期 2012.07.03
申请人 Yokoyama Mitsuru 发明人 Yokoyama Mitsuru
分类号 G01N23/20;C25D5/34 主分类号 G01N23/20
代理机构 代理人
主权项 1. A method for manufacturing a metal grating structure, comprising: a resist layer forming step of forming a resist layer on a principal plane of a silicon substrate; a patterning step of patterning the resist layer, and removing the patterned portion of the resist layer; an etching step of etching the silicon substrate corresponding to the removed portion of the resist layer by a dry etching method, and forming a concave part of a predetermined depth; an insulating layer forming step of forming an insulating layer on an inner surface of the concave part in the silicon substrate; a removing/surface area increasing step of removing a portion of the insulating layer formed on a bottom part of the concave part, and etching the silicon substrate at the bottom part of the concave part to increase a surface area of the bottom part of the concave part as compared with a state before the etching; and an electroforming step of applying a voltage to the silicon substrate to fill the concave part with metal by an electroforming method.
地址 Takatsuki-shi JP