发明名称 SEMICONDUCTOR DEVICE
摘要 A pMIS region is provided between a boundary extending in a first direction and passing through each of a plurality of standard cells and a first peripheral edge. An nMIS region is provided between the boundary and a second peripheral edge. A power supply wiring and a grounding wiring extend along the first and second peripheral edges, respectively. A plurality of pMIS wirings and a plurality of nMIS wirings are arranged on a plurality of first virtual lines and a plurality of second virtual lines, respectively, extending in the first direction and arranged with a single pitch in a second direction. The first virtual line that is the closest to the boundary and the second virtual line that is the closest to the boundary have therebetween a spacing larger than the single pitch.
申请公布号 US2014239406(A1) 申请公布日期 2014.08.28
申请号 US201414185801 申请日期 2014.02.20
申请人 RENESAS ELECTRONICS CORPORATION 发明人 TSUDA Nobuhiro;NISHIMAKI Hidekatsu;OMURA Hiroshi;YOSHIFUKU Yuko
分类号 H01L27/092 主分类号 H01L27/092
代理机构 代理人
主权项
地址 Kawasaki-shi JP