FinFETs with Strained Well Regions

摘要

A device includes a substrate and insulation regions over a portion of the substrate. A first semiconductor region is between the insulation regions and having a first conduction band. A second semiconductor region is over and adjoining the first semiconductor region, wherein the second semiconductor region includes an upper portion higher than top surfaces of the insulation regions to form a semiconductor fin. The semiconductor fin has a tensile strain and has a second conduction band lower than the first conduction band. A third semiconductor region is over and adjoining a top surface and sidewalls of the semiconductor fin, wherein the third semiconductor region has a third conduction band higher than the second conduction band.

主权项

1. A device comprising:
a substrate; insulation regions over a portion of the substrate; a first semiconductor region between the insulation regions and having a first conduction band; a second semiconductor region over and adjoining the first semiconductor region, wherein the second semiconductor region comprises an upper portion higher than top surfaces of the insulation regions to form a semiconductor fin, and wherein the semiconductor fin has a tensile strain and has a second conduction band lower than the first conduction band; and a third semiconductor region over and adjoining a top surface and sidewalls of the semiconductor fin, wherein the third semiconductor region has a third conduction band higher than the second conduction band.