| 发明名称 |
METHOD OF FABRICATING FINFETS |
| 摘要 |
The disclosure relates to a method of fabricating a semiconductor device including forming a patterned hardmask layer over a substrate comprising a major surface. The method further includes forming a plurality of first trenches and a plurality of second trenches performed at an electrostatic chuck (ESC) temperature between about 90° C. to 120° C. in the substrate. The plurality of first trenches have a first width and extend downward from the substrate major surface to a first height, and the plurality of second trenches have a second width less than first width and extend downward from the substrate major surface to a second height greater than the first height. |
| 申请公布号 |
US2014242775(A1) |
申请公布日期 |
2014.08.28 |
| 申请号 |
US201414271964 |
申请日期 |
2014.05.07 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN Yu Chao;PENG Chih-Tang;YANG Shun-Hui;CHEN Ryan Chia-Jen;CHEN Chao-Cheng |
| 分类号 |
H01L21/3065;H01L21/8234;H01L21/762 |
主分类号 |
H01L21/3065 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor device comprising:
forming a patterned hardmask layer over a substrate comprising a major surface; and forming a plurality of first trenches and a plurality of second trenches performed at an electrostatic chuck (ESC) temperature between about 90° C. to 120° C. in the substrate, the plurality of first trenches having a first width and extending downward from the substrate major surface to a first height, the plurality of second trenches having a second width less than first width and extending downward from the substrate major surface to a second height greater than the first height. |
| 地址 |
Hsinchu TW |
