I-LINE PHOTORESIST COMPOSITION AND METHOD FOR FORMING FINE PATTERN USING SAME

摘要

An I-line photoresist composition, having excellent thermal stability at high temperature of 200-250° C., by which fine photoresist patterns form using an acid diffusion layer and a method for forming a fine pattern using the same, comprising: a polymer containing 1-99 mol % of repeating unit selected from a group consisting of 1-99 mol % of repeating unit represented by Formula 1, repeating unit represented by Formula 2, repeating unit represented by Formula 3 and mixture thereof; a photo active compound containing at least two diazonaphtoquinone (DNQ) groups; and an organic solvent. Formulas 1-3 are located in the specification. R* and R** are independently a hydrogen atom or a methyl group. R1 is a hydrogen atom or linear, branch or cyclic hydrocarbonyl group of 3-15 carbon atoms, containing or not containing 1-4 oxygen atoms. R2 is linear, branch or cyclic hydrocarbonyl group of 1-30 carbon atoms, containing or not containing 1-4 oxygen atoms.

主权项

1. An I-line photoresist composition comprising:
a polymer containing 1 to 99 mol % of repeating unit selected from a group consisting of 1 to 99 mol % of repeating unit represented by a following Formula 1, a repeating unit represented by a following Formula 2, a repeating unit represented by a following Formula 3 and mixture thereof; a photo active compound containing at least two diazonaphtoquinone (DNQ) groups; and an organic solvent, wherein in Formulas 2 and 3, R* and R** each is independently a hydrogen atom or a methyl group, R1 is a hydrogen atom or linear, branch or cyclic hydrocarbonyl group of 3 to 15 carbon atoms, which contains 1 to 4 oxygen atoms or does not contains, R2 is linear, branch or cyclic hydrocarbonyl group of 1 to 30 carbon atoms, which contains 1 to 4 oxygen atoms or does not contains.