| 发明名称 |
PHASE CHANGE MEMORY MANAGEMENT |
| 摘要 |
A three dimensional (3D) stack of phase change memory (PCM) devices which includes PCM devices stacked in a 3D array, the PCM devices having memory regions; a memory management unit on at least one of the PCM devices; a stack controller in the memory management unit to monitor an ambient device temperature (Tambient) with respect to a neighborhood of memory regions in the PCM devices and to adjust a programming current with respect to at least one of the memory regions in the neighborhood of memory regions in accordance with the Tambient. Also disclosed is a method of programming a PCM device. |
| 申请公布号 |
US2014241048(A1) |
申请公布日期 |
2014.08.28 |
| 申请号 |
US201313775281 |
申请日期 |
2013.02.25 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Farooq Mukta G.;Kursun Eren;Maier Gary W.;Rajendran Bipin |
| 分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A three dimensional (3D) stack of phase change memory (PCM) devices comprising:
a plurality of PCM devices stacked in a 3D array, the plurality of PCM devices having a plurality of memory regions; a memory management unit on at least one of the PCM devices; and a stack controller in the memory management unit to monitor an ambient device temperature (Tambient) with respect to a neighborhood of memory regions in the PCM devices and to adjust a programming current with respect to at least one of the memory regions in the neighborhood of memory regions in accordance with the Tambient. |
| 地址 |
Armonk NY US |
