发明名称 METHOD FOR PRODUCING A MICROELECTRONIC DEVICE
摘要 The invention concerns a method for producing a microelectronic device comprising a substrate and a stack comprising at least one electrically conductive layer and at least on dielectric layer, wherein it comprises the following steps: formation, from one face of the substrate, of at least one pattern that is in depression with respect to a plane of the face of the substrate, the wall of the pattern comprising a bottom part and a flank part, the flank part being situated between the bottom part and the face of the substrate, the flank part comprising at least one inclined wall as far as the face of the substrate,formation of the stack, the layers of the stack helping to at least partially fill in the pattern,thinning of the stack at least as far as the plane of the face of the substrate so as to completely expose the edge of said at least one electrically conductive layer flush in one plane,formation of at least one electrical connection member (710, 720) on the substrate in contact with the edge of said at least one electrically conductive layer.
申请公布号 US2014240939(A1) 申请公布日期 2014.08.28
申请号 US201414193291 申请日期 2014.02.28
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT 发明人 SIBUET Henri
分类号 H05K13/04;H05K1/11;H05K1/18 主分类号 H05K13/04
代理机构 代理人
主权项 1. A method for producing a microelectronic device comprising a substrate and a stack comprising at least one electrically conductive layer and at least one dielectric layer, the method comprising the following steps: forming, from one face of the substrate, at least one pattern in depression with respect to a plane of the face of the substrate, the wall of the pattern comprising a bottom part and a flank part, the flank part being situated between the bottom part and the face of the substrate, the flank part comprising at least one inclined wall as far as the face of the substrate, forming the stack, the layers of the stack helping to at least partially fill in the pattern, the step of formation of the stack preferably being performed over the entire surface of the face of the substrate, thinning the stack at least as far as the plane of the face of the substrate so as to completely expose the edge of said at least one electrically conductive layer flush in one plane, after the thinning, a forming at least one electrical connection member on the substrate in contact with the edge of said at least one electrically conductive layer while completely leaving the edge of said at least one electrically conductive layer flush in said plane.
地址 Paris FR
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