PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF, AND PHOTOELECTRIC CONVERSION MODULE

摘要

A photoelectric conversion device in which a substantially intrinsic i-type amorphous hydrogen-containing semiconductor layer, a p-type amorphous hydrogen-containing semiconductor layer, and a first transparent conductive layer are stacked in this order on a first surface of an n-type semiconductor substrate that generates a photogenerated carrier by receiving light, wherein the first transparent conductive layer includes a hydrogen-containing area formed of a transparent conductive material that contains hydrogen and a hydrogen-diffusion suppression area that is present on a side of the p-type amorphous hydrogen-containing semiconductor layer with respect to the hydrogen-containing area and that is formed of a transparent conductive material that does not substantially contain hydrogen, and the hydrogen-diffusion suppression area has a hydrogen concentration distribution in which a hydrogen content on a side of the p-type amorphous hydrogen-containing semiconductor layer is lower than that on a side of the hydrogen-containing area.

主权项

1: A photoelectric conversion device in which a substantially intrinsic semiconductor layer, a p-type semiconductor layer, and a transparent conductive layer are stacked in this order on a first surface of an n-type semiconductor substrate that generates a photogenerated carrier by receiving light, wherein
the transparent conductive layer includes a hydrogen-containing area formed of a transparent conductive material that contains hydrogen and a hydrogen-diffusion suppression area that is present on a side of the p-type semiconductor layer with respect to the hydrogen-containing area and that is formed of a transparent conductive material that does not substantially contain hydrogen, the hydrogen-diffusion suppression area has a hydrogen concentration distribution in which a hydrogen content on a side of the p-type semiconductor layer is lower than a hydrogen content on a side of the hydrogen-containing area, a hydrogen concentration of the hydrogen-diffusion suppression area is equal to or lower than 1 at %, and a hydrogen concentration of the hydrogen-containing area is higher than 1 at %.