| 摘要 |
<p>An image sensor of the present invention comprises: a photodiode for accumulating electrons upon receiving light; a gate transistor for determining the transfer of electrons accumulated on the photodiode; an accumulation transistor which includes a parasitic capacitor for accumulating electrons transferred by the gate transistor and delivers a voltage level according to the amount of accumulated electrons; and a control unit for controlling the gate transistor to be operated multiple times based on a predetermined phase of an optical signal to accumulate the electrons in the parasitic capacitor.</p> |
