发明名称 METHOD OF MANUFACTURING FERROELECTRIC THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a ferroelectric thin film which enables life reliability to be improved.SOLUTION: There is provided the method of manufacturing a ferroelectric thin film having a mixed composite metal oxide form in which a composite metal oxide is mixed with a metal oxide at a specified proportion, where the composite metal oxide is represented by (PbLa)(ZrTi)O(in the formula, 0.9<x<1.3, 0&le;y<0.1 and 0&le;z<0.9 ), and where the metal oxide is composed of one or more kind of elements selected from a group consisting of Bi, Si, Pb, Ge, Sn, Al, Ga, In, Mg, Ca, Sr, Ba, V, Nb, Ta, Sc, Y, Ti, Zr, Hf, Cr, Mn, Fe, Co, Ni, Zn, Cd, Li, Na, K, P, B, Ce, Nd, S and Cs. The thin film is constituted by laminating 2 to 23 layers of fired layers and a thickness t of each of the fired layers is 45 to 500 nm, an average x of maximum diameters of crystal particles present in the fired layers in a predetermined direction is 200-5,000 nm, and a relationship of 1.5t<x<23t is satisfied in each of the fired layers.
申请公布号 JP2014157822(A) 申请公布日期 2014.08.28
申请号 JP20140042306 申请日期 2014.03.05
申请人 MITSUBISHI MATERIALS CORP 发明人 NOGUCHI TAKESHI ; SAKURAI HIDEAKI ; FUJII JUN ; WATANABE TOSHIAKI ; SOYAMA NOBUYUKI
分类号 H01B3/12;C04B35/472;C04B35/491;H01B3/00;H01G4/10;H01G4/12;H01G4/33;H01L21/822;H01L21/8242;H01L21/8246;H01L27/04;H01L27/105;H01L27/108;H01L41/08;H01L41/09;H01L41/187;H01L41/22;H01L41/39;H01L41/43 主分类号 H01B3/12
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