| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of manufacturing a superjunction semiconductor device that can reduce charge balance variation in an n-type column and a p-type column and that can achieve a high breakdown-voltage yield.SOLUTION: In a method of manufacturing a superjunction semiconductor device that forms a superjunction structure part 10 consisting of a first conductivity type region 4 and a second conductivity type region 5 on a high-concentration first conductivity type semiconductor substrate 1 as a drift layer, a cleaning step is performed before each epitaxial growth at a layer formation step and at a lamination step repeated a plurality of times, and then, epitaxial growth is performed at a temperature less than 1100°C after the cleaning step. After the epitaxial growth to a predetermined thickness, a temperature is raised to 1100°C or more, and the epitaxial growth is further performed.</p> |
