CHARACTERIZATION OF INTERFACE RESISTANCE IN A MULTI-LAYER CONDUCTIVE STRUCTURE

摘要

Disclosed is a test structure that can be used to characterize a specific interface resistance within a multi-layer conductive structure, such as a multi-layer ohmic contact. In the test structure first and second transmission line model (TLM) structures both incorporate a row of essentially identical contact pads separated by spaces with progressively increasing lengths. Conductive mesas, also with progressively increasing lengths, are positioned within the spaces between all but the initial pair of adjacent contacts pads. The first and second TLM structures differ only with respect to the presence of a single conductive layer on each of the conductive mesas. System, method and computer program product embodiments are able to extract resistance parameters associated with the first and second TLM structures, including conductive mesa to conductive layer interface resistances, based current-voltage measurements acquired from both of the TLM structures.

主权项

1. A test structure comprising:
a semiconductor substrate; a first transmission line model structure on said substrate; and a second transmission line model structure on said substrate,
said first transmission line model structure and said second transmission line model structure each comprising:
a row of contact pads comprising an initial contact pad and a group of additional contact pads adjacent to said initial contact pad, said initial contact pad being separated from said group by an initial space having a first length and pairs of additional contacts being separated by additional spaces having progressively increasing second lengths that are greater than said first length; andconductive mesas in said additional spaces,said second transmission line model structure only further comprising a conductive layer on a top surface of each of said conductive mesas.