Linear Programming Based Decoding for Memory Devices

摘要

Technologies are generally described herein for linear programming based decoding for memory devices. In some examples, a cell threshold voltage level of a memory cell is detected. An interference voltage level of an interference cell that interferes with the memory cell can be determined. The cell threshold voltage level can be decoded in accordance with a set of beliefs to determine the value of the memory cell. The set of beliefs can include a minimization of an objective function of a linear program representing inter-cell interference between the memory cell and the interference cell.

主权项

1. A method for determining a value of a memory cell of a flash memory device, the method comprising:
detecting a cell threshold voltage level of the memory cell; determining an interference voltage level of an interference cell that interferes with the memory cell; and decoding the cell threshold voltage level in accordance with a set of beliefs to determine the value of the memory cell, the set of beliefs comprising a minimization of an objective function of a linear program representing inter-cell interference between the memory cell and the interference cell.