FinFETs and the Methods for Forming the Same

摘要

A method includes providing a plurality of semiconductor fins parallel to each other, and includes two edge fins and a center fin between the two edge fins. A middle portion of each of the two edge fins is etched, and the center fin is not etched. A gate dielectric is formed on a top surface and sidewalls of the center fin. A gate electrode is formed over the gate dielectric. The end portions of the two edge fins and end portions of the center fin are recessed. An epitaxy is performed to form an epitaxy region, wherein an epitaxy material grown from spaces left by the end portions of the two edge fins are merged with an epitaxy material grown from a space left by the end portions of the center fin to form the epitaxy region. A source/drain region is formed in the epitaxy region.

主权项

1. A device, comprising:
a plurality of semiconductor fins disposed over a semiconductor substrate, wherein each of the plurality of semiconductor fins are parallel to other ones of the plurality of semiconductor fins, at least one center fin of the plurality of semiconductor fins disposed between at least two edge fins of the plurality of fins, and wherein each of the at least two edge fins comprises two end portions disconnected from each other; a gate stack on a top surface and sidewalls of the at least one center fin; and source/drain regions each extending over an end portion of the at least one center fin and each extending to over end portions of the least two edge fins.