SEMICONDUCTOR DEVICE

摘要

Disclosed is a semiconductor device including two oxide semiconductor layers, where one of the oxide semiconductor layers has an n-doped region while the other of the oxide semiconductor layers is substantially i-type. The semiconductor device includes the two oxide semiconductor layers sandwiched between a pair of oxide layers which have a common element included in any of the two oxide semiconductor layers. A double-well structure is formed in a region including the two oxide semiconductor layers and the pair of oxide layers, leading to the formation of a channel formation region in the n-doped region. This structure allows the channel formation region to be surrounded by an i-type oxide semiconductor, which contributes to the production of a semiconductor device that is capable of feeding enormous current.

主权项

1. A semiconductor device comprising:
a transistor which includes:
a first oxide layer;a first oxide semiconductor layer over and in contact with the first oxide layer, the first oxide semiconductor layer including a first region containing an impurity;a second oxide semiconductor layer over and in contact with the first region; anda second oxide layer over and in contact with the second oxide semiconductor layer.