| 摘要 |
<p>A method of grinding an ingot for use in manufacturing a semiconductor or solar wafer is disclosed. The method includes providing an ingot including four flat sides and four rounded corner portions, each corner portion extending between an adjacent pair of the flat sides, and grinding a plurality of planar facets on each corner portion, each planar facet of the corner portion joined to an adjacent facet at a juncture and oriented such that each corner portion has a substantially arcuate shape. A wafer and ingot are also disclosed.</p> |
