| 摘要 |
Disclosed are a vertical light-emitting diode and a method for manufacturing the same. According to the present invention, a transparent electrode is formed between an electrode pad and a semiconductor layer, wherein the transparent electrode is made of a resistance variable material having a high light transmittance for the entire range of light and forming conductive filaments allowing a current to flow therein if a voltage greater than an inherent threshold voltage is applied to the material, so as to be converted from a high-resistance state to a low-resistance state. Thus, the current introduced into the electrode pad can be diffused from the transparent electrode to the entire area of the light-emitting diode, so the problems of current concentration can be resolved. The transparent electrode has a high transmittance for both visible light generated by the light-emitting diode and ultraviolet light (especially, ultraviolet rays in the wavelength region of 340 to 280 nm and the wavelength region of less than 280 nm), and the conductivity of which is increased by the conductive filaments, thereby showing good contact characteristics with the semiconductor layer. In addition, if a current diffusion layer consisting of CNT or graphene having excellent conductivity and light transmittance characteristics is formed on the upper or lower side of the transparent electrode, the conductive filaments formed inside the transparent electrode are connected with one another so as to diffuse the current flowing into the transparent electrode to the whole semiconductor layer, thereby avoiding the current concentration more effectively. |
