发明名称 |
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE INCLUDING A VERTICAL NANOWIRE |
摘要 |
<p>A method comprises providing a semiconductor structure comprising a substrate and a nanowire above the substrate. The nanowire comprises a first semiconductor material and extends in a vertical direction of the substrate. A material layer is formed above the substrate. The material layer annularly encloses the nanowire. A first part of the nanowire is selectively removed relative to the material layer. A second part of the nanowire is not removed. A distal end of the second part of the nanowire distal from the substrate is closer to the substrate than a surface of the material layer so that the semiconductor structure has a recess at the location of the nanowire. The distal end of the nanowire is exposed at the bottom of the recess. The recess is filled with a second semiconductor material. The second semiconductor material is differently doped than the first semiconductor material.</p> |
申请公布号 |
SG2014002539(A) |
申请公布日期 |
2014.08.28 |
申请号 |
SG20140002539 |
申请日期 |
2014.01.13 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
BALDAUF, TIM;FLACHOWSKY, STEFAN;ILLGEN, RALF;HERRMANN, TOM |
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