| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that allows efficiently achieving high breakdown voltage, reduction in a leakage current, and suppression of a current collapse.SOLUTION: A semiconductor device includes: a first semiconductor layer formed on a substrate and composed of a nitride semiconductor; a second semiconductor layer formed on a surface of the first semiconductor layer and composed of a nitride semiconductor having a wider band gap than the first semiconductor layer; a third semiconductor layer formed on a surface of the second semiconductor layer, having a narrower band gap than the second semiconductor layer, and composed of a nitride semiconductor containing indium; a first electrode being in contact with the third semiconductor layer and formed so as to be in Schottky contact with the second semiconductor layer; and a second electrode formed so as to be in ohmic contact with the second semiconductor layer. The third semiconductor layer extends from the first electrode side to the second electrode side, and the third semiconductor layer exists between an end portion of the first electrode on the second electrode side and the second semiconductor layer. |
