| 发明名称 |
ATOMIC LAYER DEPOSITION METHOD |
| 摘要 |
An ALD method includes providing a substrate in an ALD reactor, performing a pre-ALD treatment to the substrate in the ALD reactor, and performing one or more ALD cycles to form a dielectric layer on the substrate in the ALD reactor. The pre-ALD treatment includes providing a hydroxylating agent to the substrate in a first duration, and providing a precursor to the substrate in a second duration. Each of the ALD cycles includes providing the hydroxylating agent to the substrate in a third duration, and providing the precursor to the substrate in a fourth duration. The first duration is longer than the third duration. |
| 申请公布号 |
US2014242811(A1) |
申请公布日期 |
2014.08.28 |
| 申请号 |
US201313778147 |
申请日期 |
2013.02.27 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Chang Jui-Chen;Chiang Chen-Kuo;Lin Chin-Fu;Liu Chih-Chien |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An atomic layer deposition (ALD) method comprising:
providing a substrate in an ALD reactor; performing a pre-ALD treatment to the substrate in the ALD reactor, the pre-ALD treatment comprising:
providing a hydroxylating agent to the substrate in a first duration; andproviding a precursor to the substrate in a second duration; and performing one or more ALD cycles to form a dielectric layer on the substrate in the ALD reactor, each of the ALD cycles comprising:
providing the hydroxylating agent to the substrate in a third duration; andproviding the precursor to the substrate in a fourth duration, wherein the first duration is longer than the third duration. |
| 地址 |
Hsin-Chu City TW |
