发明名称 WAFER PACKAGING METHOD
摘要 A wafer packaging method includes the following steps. A wafer having a plurality of integrated circuit units is provided. A first surface of the wafer opposite to the integrated circuit units is ground. A release layer is formed on a second surface of a light transmissive carrier. An ultraviolet temporary bonding layer is formed on the second surface of the light transmissive carrier or a third surface of the wafer. The ultraviolet temporary bonding layer is used to adhere the second surface of the light transmissive carrier to the third surface of the wafer. The first surface of the wafer is adhered to an ultraviolet tape. A fourth surface of the light transmissive carrier is exposed to ultraviolet to eliminate adhesion force of the ultraviolet temporary bonding layer. The light transmissive carrier and the release layer are removed.
申请公布号 US2014242742(A1) 申请公布日期 2014.08.28
申请号 US201414191348 申请日期 2014.02.26
申请人 XINTEC INC. 发明人 CHANG Yi-Ming;LIU Kuo-Hua;WANG Yi-Cheng;CHANG Sheng-Yen
分类号 H01L31/0203;H01L21/683 主分类号 H01L31/0203
代理机构 代理人
主权项 1. A wafer packaging method comprising: (a) providing a wafer having a plurality of integrated circuit units; (b) grinding a first surface of the wafer opposite to the integrated circuit units; (c) providing a light transmissive carrier; (d) forming a release layer on a second surface of the light transmissive carrier; (e) forming an ultraviolet temporary bonding layer on the second surface of the light transmissive carrier or a third surface of the wafer opposite to the first surface; (f) using the ultraviolet temporary bonding layer to adhere the second surface of the light transmissive carrier to the third surface of the wafer, such that the release layer is covered by the ultraviolet temporary bonding layer; (g) adhering the first surface of the wafer to an ultraviolet tape; (h) exposing a fourth surface of the light transmissive carrier opposite to the second surface to ultraviolet to eliminate adhesion force of the ultraviolet temporary bonding layer; and (i) removing the light transmissive carrier and the release layer located on third surface of the wafer.
地址 Zhongli City TW