发明名称 |
TECHNIQUES FOR CLAMPING AND DECLAMPING A SUBSTRATE |
摘要 |
Methods of clamping and declamping a wafer from a platen are disclosed. The platen comprises one or more electrodes, which are electrically biased to electrostatically clamp the wafer to the platen. The electrode is biased to a first voltage where the wafer may be processed. Thereafter, one or more voltages are subsequently applied to the electrodes. In some embodiments, each subsequent voltage is less than the previously applied voltage. In other embodiments, one or more of the subsequent voltages may be greater than the previously applied voltage. This sequence of voltage may reduce the likelihood that the wafer will stick or adhere to the platen during the removal process. |
申请公布号 |
US2014240891(A1) |
申请公布日期 |
2014.08.28 |
申请号 |
US201313872417 |
申请日期 |
2013.04.29 |
申请人 |
Associates, Inc. Varian Semiconductor Equipment |
发明人 |
KOO ILWOONG;HYUN SUNG-HWAN |
分类号 |
H01L21/683 |
主分类号 |
H01L21/683 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of clamping and declamping a wafer from a platen, comprising:
placing said wafer on said platen, said platen comprising an electrode for clamping said wafer onto said platen, while said electrode is biased at an initial voltage; applying a first voltage to said electrode of the platen to electrostatically clamp said wafer to said platen, said first voltage greater than said initial voltage; applying a second voltage to said electrode, said second voltage less than said first voltage and greater than said initial voltage; and removing said wafer from said platen after said application of said second voltage to said electrode. |
地址 |
US |