发明名称 FILM THICKNESS MONITORING METHOD, FILM THICKNESS MONITORING DEVICE, AND SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 In accordance with an embodiment, a film thickness monitoring method includes applying light to a laminated body, detecting reflected light from the laminated body and outputting signals corresponding to the detected light, and judging whether a film thickness of an opaque film which is a polishing target has reached a desired film thickness. The laminated body includes a transparent film and the opaque film on the transparent film. A comparison value between the signal before polishing the opaque film and the signal after starting the polishing is obtained at predetermined time intervals, and whether the film thickness of the opaque film has reached the desired film thickness is judged based on a relationship between the comparison value of the signals and a predetermined threshold value.
申请公布号 US2014238605(A1) 申请公布日期 2014.08.28
申请号 US201314021221 申请日期 2013.09.09
申请人 Kabushiki Kaisha Toshiba 发明人 MIKAMI Toru
分类号 H01L21/66;G01B11/06 主分类号 H01L21/66
代理机构 代理人
主权项 1. A film thickness monitoring method for an opaque film, comprising: applying light to a laminated body comprising a transparent film and an opaque film which is a polishing target on the transparent film; detecting reflected light from the laminated body and outputting signals corresponding to the detected light; and obtaining a comparison value between the signal before polishing the opaque film and the signal after starting the polishing at predetermined time intervals, and judging whether a film thickness of the opaque film has reached a desired film thickness based on a relationship between the comparison value of the signals and a predetermined threshold value.
地址 Minato-ku JP