| 摘要 |
Disclosed is an inductively coupled plasma processing apparatus which performs a uniform plasma processing against a large treated substrate by means of a division type dielectric window. The inductively coupled plasma processing apparatus which performs the inductively coupled plasma processing on a rectangular substrate comprises: a processing room accommodating the substrate; a high frequency antenna to make inductively coupled plasma on the area whereby the substrate accommodated in the processing room is located; and a rectangular dielectric window arranged corresponding to the substrate and located between the plasma producing area and the high frequency antenna. The high frequency antenna is arranged on a surface corresponding to the dielectric window and is capable of winding. The dielectric window (2) is divided into a plurality of divisions by a support beam (6) of a metal material to include a first division (201) having a long side (2a) and a second division (202), wherein a width ratio of the width (a) of the second division (202) in a diameter direction and the width (b) of the first division (201) in a diameter direction is between 0.8 or more and 1.2 or less. |
