A HEAT RADIATION SUBSTRATE OF LED, AND THE PREPARATION METHOD THEREOF

摘要

The present invention relates to a heat radiating substrate for light emitting diode and a method for manufacturing the same comprising a substrate; and a thick film of poly-crystalline silicon carbide (SiC) formed on the surface of the substrate. According to the present invention, a heat radiating substrate for light emitting diode is able to enlarge area of the heat radiating substrate with poly-crystalline silicon carbide capable of enlarging area compared to the previous single-crystalline silicon carbide, and has an excellent effect in terms of price competitiveness due to relatively low manufacturing costs. In addition, because the poly-crystalline silicon carbide has similar level of heat conductivity compared to the previous single-crystalline silicon carbide, the present invention of heat radiating substrate has an advantage in demonstrating good heat radiation property.