发明名称 |
Thin film transistor and its manufacturing method |
摘要 |
A thin film transistor of the present invention includes a semiconductor thin film, a gate insulating film formed on one surface of the semiconductor thin film; a gate electrode formed to be opposite to the semiconductor thin film through the gate insulating film; a source electrode and a drain electrode electrically connected to the semiconductor thin film; a source region; a drain region; and a channel region. The thin film transistor further includes an insulating film formed on a peripheral portion corresponding to at least the source region and the drain region of the semiconductor thin film, and having a contact hole through which at least a part of each of the source region and the drain region is exposed wherein the source electrode and the drain electrode are connected to the semiconductor thin film through the contact hole. |
申请公布号 |
EP2264770(A3) |
申请公布日期 |
2014.08.27 |
申请号 |
EP20100009733 |
申请日期 |
2005.09.02 |
申请人 |
CASIO COMPUTER CO., LTD. |
发明人 |
ISHII, HIROMITSU;HOKARI,HITOSHI;YOSHIDA, MOTOHIKO |
分类号 |
H01L29/45;H01L21/336;H01L29/417;H01L29/66;H01L29/786 |
主分类号 |
H01L29/45 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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