| 摘要 |
The present invention relates to a non-volatile memory device, and provides a non-volatile memory device comprising: a first and a second electrode; an organic layer provided between the first and second electrodes, and including donor material and acceptor material; and a nanocrystal layer consisting of at least one layer provided in the organic layer. In this manner, the present invention enables the manufacture of a memory device produced with a crystal layer formed in the organic layer and including donor material and acceptor material, to increase the electric charge probability of the nanocrystals and to improve the reliability of the device. |
