| 摘要 |
PROBLEM TO BE SOLVED: To provide an air gap structure for electrically isolating between an element and a wire of a semiconductor device with which an element isolation region can be formed by a simple method, and to provide a method of forming the structure. SOLUTION: The method of forming an air gap 8 in a trench 2 includes an application step of applying an application liquid containing silica particles 5 with an average particle size ranging from≥1.0 time to≤200 nm of an opening width of the trench 2 and a binder component 6 on a first surface 4 of a substrate 1 having the trench 2 with the opening formed on the first surface and a heating step of heating the substrate 1 at a temperature of a thermal decomposition temperature of the binder or higher after the application step. COPYRIGHT: (C)2011,JPO&INPIT |
