CAPACITOR AND SEMICONDUCTOR DEVICE USING IT

摘要

Provided is a capacitor which improves the current leakage characteristics by band gap engineering of a capacitor dielectric layer included in the capacitor. The capacitor comprises: a first electrode; a first dielectric layer and a second dielectric layer which are sequentially formed on the first electrode, have different impurity concentrations from each other, and are consisting of the same genetic materials; and a second electrode formed on the second dielectric layer.