SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

摘要

Disclosed are a semiconductor light emitting device having a static electricity protection structure and a production method thereof. The semiconductor light emitting device comprises: a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer which are sequentially stacked from the top; an electrode structure which is stacked on the lower surface of the light emitting structure; one or more via holes which are configured to expose the first conductive semiconductor layer by penetrating a partial layer of the electrode structure, the second conductive semiconductor layer, and the active layer in order to electrically connect one of the electrodes of the electrode structure to the first conductive semiconductor layer; and a surrounding insulating film which is located in the light emitting structure within the partial layer of the electrode structure in the circumference of the via holes or the light emitting structure.