| 摘要 |
PROBLEM TO BE SOLVED: To simplify processes and decrease the number of processes when forming a multilayer integrated circuit having a multilayer structure of single crystal semiconductor layers on a support substrate; and improve yield. SOLUTION: In a semiconductor device, semiconductor junction interface regions of semiconductor elements in a substrate surface are arranged such that laser beams can be directly irradiated to heat the substrate from a support substrate side, in other words, from a surface of the substrate on which an element is not formed. After a first semiconductor element layer and a second semiconductor element layer are formed, activations of semiconductor junction interface regions of the first semiconductor element layer and the second semiconductor element layer are simultaneously performed by irradiation of laser beams from the support substrate side. A layer between the support substrate and the semiconductor element layer is light permeable and has a structure not to attenuate laser beams. COPYRIGHT: (C)2013,JPO&INPIT |
