发明名称
摘要 PROBLEM TO BE SOLVED: To gather data associated with many pattern conversion differences such as a wafer in-plane distribution in a short time, and to suitably determine or manage manufacture precision of a semiconductor device. SOLUTION: A plurality of capacitors having different areas are formed in an active area in a semiconductor element manufacturing process, voltages are applied to the respective capacitors to detect respective capacitor currents, and pattern conversion differences of the active area are calculated from the areas of the capacitors corresponding to detected current values, thereby determining the manufacture precision based upon the pattern conversion differences. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP5578894(B2) 申请公布日期 2014.08.27
申请号 JP20100056010 申请日期 2010.03.12
申请人 发明人
分类号 H01L21/66;H01L21/822;H01L27/04 主分类号 H01L21/66
代理机构 代理人
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