| 摘要 |
A method for producing a gallium nitride based compound semiconductor light emitting device which is excellent in terms of the light emitting properties and the light emission efficiency and a lamp is provided. In such a method for producing a gallium nitride based compound semiconductor light emitting device, which is a method for producing a GaN based semiconductor light emitting device having at least a buffer layer, an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a translucent substrate, on which an uneven pattern composed of a convex shape and a concave shape is formed, the buffer layer is formed by a sputtering method conducted in an apparatus having a pivoted magnetron magnetic circuit and the buffer layer contains AlN, ZnO, Mg, or Hf. |
