Photoelectronic device and image sensor

摘要

Disclosed are a photoelectronic device (100) including a first electrode (110) including a first metal; an active layer (130) disposed between the first electrode (110) and a second electrode (140); and a diffusion barrier layer (120) disposed between the first electrode (110) and the active layer (130); the diffusion barrier layer (120) including a second metal, wherein the second metal has a thermal diffusivity that is lower than a thermal diffusivity of the first metal, and wherein the first electrode (110) and the diffusion barrier layer (120) are configured to transmit light, and an image sensor including the photoelectronic device.