发明名称 DIRECT CURRENT ION IMPLANTATION FOR SOLID PHASE EPITAXIAL REGROWTH IN SOLAR CELL FABRICATION
摘要 <p>An apparatus and methods for ion implantation of solar cells. The disclosure provide enhanced throughput and recued or elimination of defects after SPER anneal step. The substrate is continually implanted using continuous high dose-rate implantation, leading to efficient defect accumulation, i.e., amorphization, while suppressing dynamic self-annealing.</p>
申请公布号 EP2641266(A4) 申请公布日期 2014.08.27
申请号 EP20110841747 申请日期 2011.11.17
申请人 INTEVAC, INC. 发明人 CHUN, MOON;ADIBI, BABAK
分类号 H01L21/20;H01L21/223;H01L21/324;H01L31/18 主分类号 H01L21/20
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