MAGNETORESISTIVE STRUCTURE, MEMORY DEVICE INCLUDING THE SAME AND MANUFACTURING METHODS THEREOF

摘要

Disclosed are a magnetoresistive structure, a memory device including the magnetoresistive structure, and a manufacturing method thereof. The disclosed magnetoresistive structure includes a free magnetization layer; a separation layer wider than the free magnetization layer; and a fixed magnetization layer wider than the free magnetization layer. Multiple pieces of the free magnetization layer can be provided. The separation layer and the fixed magnetization layer can have a structure covering the multiple free magnetization layers. The separation layer can be arranged on the free magnetization layers, or the free magnetization layers can be arranged on the separation layer.