Method for forming metal silicide layers

摘要

The present invention is directed to a method for forming a metal silicide layer on a non-textured silicon substrate surface, the method comprising:
- providing a metal layer on a non-textured silicon substrate,
- subsequently performing a pulsed laser annealing step providing at least one laser pulse, thereby converting at least part of the metal layer into a metal silicide layer. In the addition, the present invention is directed to the use of such method in back side metallization of a photovoltaic cell.