| 摘要 |
<p>The purpose of the present invention is to provide a semiconductor device capable of improving the bonding strength between a semiconductor substrate and a back electrode while maintaining electrical characteristics of the semiconductor device. The present invention comprises a semiconductor substrate (2a) and a back electrode (a back multilayer electrode (1) in an embodiment) installed on the back surface of the semiconductor substrate. A rough surface pattern (4a) is formed in an edge part of the back surface of the semiconductor substrate (2a) which faces the back multilayer electrode (1).</p> |
