Silicon carbide barrier diode

摘要

Improved semiconductor devices are fabricated utilizing nickel gallide and refractory borides deposited onto a silicon carbide semiconductor substrate. Varying the deposition and annealing parameters of fabrication can provide a more thermally stable device that has greater barrier height and a low ideality. This improvement in the electrical properties allows use of Schottky barrier diodes in high power and high temperature applications. In one embodiment, a refractory metal boride layer is joined to a surface of a silicon carbide semiconductor substrate. The refractory metal boride layer is deposited on the silicon carbon semiconductor substrate at a temperature greater than 200° C. In another embodiment, a Schottky barrier diode is fabricated via deposition of nickel gallide on a SiC substrate.

主权项

1. A semiconductor device, comprising:
a silicon carbide semiconductor substrate; and a refractory metal boride layer joined to one surface of the silicon carbide semiconductor substrate; wherein the refractory metal boride layer is made of at least one of TiB2, CrB2, WB, W2B5, and W2B and is deposited on the silicon carbide semiconductor substrate at a temperature greater than 200° C.