Semiconductor device and method of manufacturing the same

摘要

A method comprising, introducing a dopant type into a semiconductor layer to define a well region of the semiconductor layer, the well region comprising a channel region, and introducing a dopant type into the well region to define a multiple implant region substantially coinciding with the well region but excluding the channel region.

主权项

1. A method comprising:
performing an initial ion implantation process to implant a first dopant type into a semiconductor layer to define a well region of the semiconductor layer, the well region comprising a channel region and a region for multiple ion implantation; disposing a mask over the channel region, wherein the mask does not extend over the region for multiple ion implantation; and performing a subsequent ion implantation process, while the mask is disposed over the channel region, to implant the first dopant type into the region for multiple ion implantation to define a multiple implant region substantially coinciding with the well region but excluding the channel region.