Method of fabricating semiconductor device

摘要

Provided is a method of manufacturing a semiconductor device having a capacitor. The method includes forming a composite layer, including sequentially stacking on a substrate alternating layers of first through nth sacrificial layers and first through nth supporting layers. A plurality of openings that penetrate the composite layer are formed. A lower electrode is formed in the plurality of openings. At least portions of the first through nth sacrificial layers are removed to define a support structure for the lower electrode extending between adjacent ones of the plurality of openings and the lower electrode formed therein, the support structure including the first through nth supporting layers and a gap region between adjacent ones of the first through nth supporting layers where the first through nth sacrificial layers have been removed. A dielectric layer is formed on the lower electrode and an upper electrode is formed on the dielectric layer.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
providing a substrate; forming a composite layer, including sequentially stacking on the substrate alternating layers of first through nth sacrificial layers and first through nth supporting layers, where n is a natural number greater than 1, wherein the first supporting layer is stacked on the first sacrificial layer; forming a plurality of openings that penetrate the composite layer; forming a lower electrode in the plurality of openings; removing at least portions of the first through nth sacrificial layers to define a support structure for the lower electrode extending between adjacent ones of the plurality of openings and the lower electrode formed therein, the support structure including the first through nth supporting layers and a gap region between adjacent ones of the first through nth supporting layers where the first through nth sacrificial layers have been removed; forming a dielectric layer on the lower electrode; and forming an upper electrode on the dielectric layer, wherein forming a composite layer includes:
forming one of the sacrificial layers;performing a hydrogen treatment on the formed one of the sacrificial layers that limits subsequent formation of a native oxide layer thereon;forming an adjacent one of the supporting layers on the hydrogen treated sacrificial layer; andrepeating forming one of the sacrificial layers, performing a hydrogen treatment and forming an adjacent one of the supporting layers to provide the first through nth sacrificial layers and first through nth supporting layers.