Method of fabricating semiconductor die with through-hole via on saw streets and through-hole via in active area of die

摘要

A semiconductor wafer contains a plurality of die with contact pads disposed on a first surface of each die. Metal vias are formed in trenches in the saw street guides and are surrounded by organic material. Traces connect the contact pads and metal vias. The metal vias can be half-circle vias or full-circle vias. Metal vias are also formed through the contact pads on the active area of the die. Redistribution layers (RDL) are formed on a second surface of the die opposite the first surface. Repassivation layers are formed between the RDL for electrical isolation. The die are stackable and can be placed in a semiconductor package with other die. The vias through the saw streets and vias through the active area of the die, as well as the RDL, provide electrical interconnect to the adjacent die.

主权项

1. A method of making a semiconductor device, comprising:
forming a semiconductor wafer including active areas separated from each other by saw street guides; forming contact pads on a first surface of the semiconductor wafer within the active areas; forming a trench in the saw street guides; filling the trench with organic material; forming first vias in the organic material; forming second vias through the contact pads on the active areas of the semiconductor wafer; forming conductive traces between the contact pads and first vias; depositing conductive material in the first vias and second vias to form first conductive vias and second conductive vias, respectively; and singulating the semiconductor wafer along the saw street guides to separate the active areas of the semiconductor wafer into die.