发明名称 Film forming method and method for manufacturing film-formation substrate
摘要 One embodiment of the present invention is a film forming method including the steps of forming an absorption layer 12 over one surface of a first substrate 11; forming a layer 16 containing a high molecular compound over the absorption layer; removing an impurity in the layer containing the high molecular compound by performing a first heat treatment on the layer 16; forming a material layer 18 containing a first film formation material and a second film formation material over the layer 16; performing a second heat treatment to form a mixed layer 19 in which the material layer and the layer 16 are mixed over the absorption layer; and performing third heat treatment to form a layer 19a containing the first film formation material and the second film formation material on a film-formation target surface of a second substrate.
申请公布号 US8815352(B2) 申请公布日期 2014.08.26
申请号 US201113635177 申请日期 2011.02.28
申请人 Semiconductor Energy Laboratory Co., Ltd.;Sharp Kabushiki Kaisha 发明人 Aoyama Tomoya;Ikeda Hisao;Inoue Satoshi;Sonoda Tohru
分类号 B05D3/06;B05D3/00 主分类号 B05D3/06
代理机构 Husch Blackwell LLP 代理人 Husch Blackwell LLP
主权项 1. A film forming method comprising the steps of: forming an absorption layer over a one surface of a first substrate; forming a layer containing a polymer compound over the absorption layer; removing an impurity in the layer containing the polymer compound by performing a first heat treatment on the layer containing the polymer compound at a temperature higher than or equal to a glass transition temperature of the polymer compound from the other surface of the first substrate; forming a material layer containing a first film formation material and a second film formation material over the layer containing the polymer compound; forming a mixed layer in which the material layer and the layer containing the polymer compound are mixed over the absorption layer by performing a second heat treatment on the material layer and the layer containing the polymer compound; placing a one surface of the first substrate and a film formation target surface of a second substrate so as to face each other; and forming a layer containing the first film formation material and the second film formation material over the film formation target surface of the second substrate by performing a third heat treatment on the mixed layer from the other surface of the first substrate, wherein the polymer compound, the first film formation material and the second film formation material satisfy the following range below, Ta−100≦S≦400, wherein S represents the glass transition temperature (° C.) of the polymer compound, and Ta represents a temperature (° C.) which is the higher sublimation temperature of the first film formation material and the second film formation material wherein the absorption layer is heated to a first temperature by the second heat treatment, wherein the absorption layer is heated to a second temperature by the third heat treatment, and wherein the first temperature is lower than the second temperature.
地址 JP